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| SIPMOS(R) Power Transistor q N channel q Enhancement mode q FREDFET BUZ 205 Type BUZ 205 VDS 400 V ID 6.0 A RDS (on) 1.0 Package 1) TO-220 AB Ordering Code C67078-A1401-A2 Maximum Ratings Parameter Continuous drain current, TC = 35 C Pulsed drain current, TC = 25 C Drain-source voltage Drain-gate voltage, RGS = 20 k Gate-source voltage Power dissipation, TC = 25 C Operating and storage temperature range Thermal resistance, chip-case DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values 6.0 24 400 400 20 75 - 55 ... + 150 1.67 E 55/150/56 W C K/W - V Unit A ID ID puls VDS VDGR VGS Ptot Tj , Tstg Rth JC 1) See chapter Package Outlines. Semiconductor Group 508 BUZ 205 Electrical Characteristics at Tj = 25 C, unless otherwise specified. Parameter Symbol min. Static characteristics Drain-source breakdown voltage VGS = 0 V, ID = 0.25 mA Gate threshold voltage VGS = VDS , ID = 1 mA Zero gate voltage drain current Values typ. max. Unit V(BR) DSS VGS (th) IDSS 400 2.1 - 4.0 - 4.0 V A - - 20 100 10 0.9 250 1000 100 1.0 nA VDS = 400 V, VGS = 0 V Tj = 25 C Tj = 125 C Gate-source leakage current IGSS RDS (on) - - VGS = 20 V, VDS = 0 V Drain-source on-resistance VGS = 10 V, ID = 4.0 A Dynamic characteristics Forward transconductance VDS 2 x ID x RDS(on)max , ID = 4.0 A Input capacitance gfs Ciss Coss Crss 1.7 - - - - - - - 2.9 1500 120 35 30 40 110 50 - 2000 180 60 45 60 140 65 S pF VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz td (on) Turn-on time ton , (ton = td (on) + tr) VDD = - 30 V, VGS = 10 V, ID = 2.7 A, RGS = 50 t r ns Turn-off time toff , (toff = td (off) + tf) td (off) VDD = - 30 V, VGS = 10 V, ID = 2.7 A, RGS = 50 t f Semiconductor Group 509 BUZ 205 Electrical Characteristics (cont'd) at Tj = 25 C, unless otherwise specified. Parameter Symbol min. Reverse diode Continuous reverse drain current TC = 25 C Pulsed reverse drain current TC = 25 C Diode forward on-voltage Values typ. max. Unit IS ISM VSD trr Qrr - - - - - - - 1.3 180 0.65 6.0 24 1.6 250 1.2 A V ns C IS = 12 A, VGS = 0 V Reverse recovery time VR = 100 V, IF = IDR , diF / dt = 100 A/s Reverse recovery charge VR = 100 V, IF = IDR , diF / dt = 100 A/s Semiconductor Group 510 BUZ 205 Characteristics at Tj = 25 C, unless otherwise specified. Total power dissipation Typ. output characteristics Ptot = f (TC) ID = f (VDS) parameter: tp = 80 s Safe operating area ID = f (VDS) parameter: D = 0.01, TC = 25 C Typ. transfer characteristics ID = f (VGS) parameter: tp = 80 s, VDS = 25 V Semiconductor Group 511 BUZ 205 Typ. drain-source on-resistance RDS (on) = f (ID) parameter: VGS Drain-source on-resistance RDS (on) = f (Tj) parameter: ID = 4.0 A, VGS = 10 V, (spread) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s Gate threshold voltage VGS (th) = f (Tj) parameter: VGS = VDS , ID = 1 mA, (spread) Semiconductor Group 512 BUZ 205 Typ. capacitances C = f (VDS) parameter: VGS = 0 V, f = 1 MHz Drain current ID = f (TC) parameter: VGS 10 V Forward characteristics of reverse diode IF = f (VSD) parameter: tp = 80 s, Tj Transient thermal impedance Z th JC = f (tp) parameter: D = tp / T Semiconductor Group 513 |
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